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AFP3679S - P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP3679S, a member of the AFP3679S-Alfa P-Channel Enhancement Mode MOSFET family.

Description

AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • -30V/-20A,RDS(ON)=10mΩ@VGS=-10V -30V/-15A,RDS(ON)=15mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design.

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Datasheet Details

Part number AFP3679S
Manufacturer Alfa-MOS
File Size 819.30 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP3679S Datasheet
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Alfa-MOS Technology General Description AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP3679S 30V P-Channel Enhancement Mode MOSFET Features -30V/-20A,RDS(ON)=10mΩ@VGS=-10V -30V/-15A,RDS(ON)=15mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch Load Switch in High Current Applications DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No.
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