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AFP7611 Datasheet P-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFP7611, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-363 ) AFP7611 20V P-Channel Enhancement Mode MOSFET

Key Features

  • -20V/-3.0A,RDS(ON)=110mΩ@VGS=-4.5V.
  • -20V/-2.4A,RDS(ON)=135mΩ@VGS=-2.5V.
  • -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-363 package design.

More Datasheets from Alfa-MOS

Part Number Description
AFP7617WS P-Channel MOSFET
AFP7619WS P-Channel MOSFET
AFP7631S P-Channel MOSFET
AFP7001KAS 60V P-Channel MOSFET
AFP7113WS P-Channel MOSFET
AFP7117WS 150V P-Channel MOSFET
AFP7119WS 200V P-Channel Enhancement Mode MOSFET
AFP7127S P-Channel MOSFET
AFP7129S 60V P-Channel MOSFET
AFP7143S P-Channel MOSFET

AFP7611 Distributor