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AFP7611 - P-Channel MOSFET

This page provides the datasheet information for the AFP7611, a member of the AFP7611-Alfa P-Channel MOSFET family.

Description

AFP7611, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-3.0A,RDS(ON)=110mΩ@VGS=-4.5V.
  • -20V/-2.4A,RDS(ON)=135mΩ@VGS=-2.5V.
  • -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-363 package design.

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Datasheet preview – AFP7611

Datasheet Details

Part number AFP7611
Manufacturer Alfa-MOS
File Size 498.63 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP7611 Datasheet
Additional preview pages of the AFP7611 datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP7611, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFP7611 20V P-Channel Enhancement Mode MOSFET Features  -20V/-3.0A,RDS(ON)=110mΩ@VGS=-4.5V  -20V/-2.4A,RDS(ON)=135mΩ@VGS=-2.5V  -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.
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