AFP7619WS - P-Channel MOSFET

This page provides the datasheet information for the AFP7619WS, a member of the AFP7619WS-Alfa P-Channel MOSFET family.

Description

AFP7619WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

-30V/-10A,RDS(ON)=18mΩ@VGS=-10V.
-30V/-8A,RDS(ON)=28mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
DFN3X3-8L package design.

Alfa-MOS

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Datasheet Details

Part number	AFP7619WS
Manufacturer	Alfa-MOS
File Size	458.15 KB
Description	P-Channel MOSFET
Datasheet	AFP7619WS Datasheet
Additional preview pages of the AFP7619WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP7619WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFP7619WS 30V P-Channel Enhancement Mode MOSFET Features  -30V/-10A,RDS(ON)=18mΩ@VGS=-10V  -30V/-8A,RDS(ON)=28mΩ@VGS=-4.

Published: Nov 24, 2018 |