AFP7001KAS Description
AFP7001KAS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP7001KAS 60V P-Channel Enhancement Mode MOSFET.
AFP7001KAS Key Features
- ID=-0.5A,RDS(ON)=5Ω@VGS=-10V
- ID=-0.1A,RDS(ON)=6Ω@VGS=-4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23 package design
- Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc
- Battery Operated Systems
- Power Supply Converter Circuits
- Solid-State Relays