AFP7001KAS Datasheet | Alfa-MOS

Description AFP7001KAS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 60V P-Channel Enhancement Mode MOSFET Features - ID=-0.5A,RDS(ON)=5Ω@VGS=-10V - ID=-0.1A,RDS(ON)=6Ω@VGS=-4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - ESD Protection Diode design- in - SOT-23 package design Application - Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. - Battery Operated Systems - Power Supply Converter Circuits - Solid-State Relays Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFP7001KASS23RG 1KYW SOT-23 ※ 1K parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFP7001KASS23RG : 7” Tape & Reel ; Pb- Free ; Halogen - Free Unit Tape & Reel Quantity 3000 EA ©Alfa-MOS Technology Corp. Rev.B Dec. 2022 .alfa-mos. Page...