Download the AFP7001KAS datasheet PDF.
This datasheet also covers the AFP7001KAS-Alfa variant, as both devices belong to the same 60v p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
AFP7001KAS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Key Features
ID=-0.5A,RDS(ON)=5Ω@VGS=-10V.
ID=-0.1A,RDS(ON)=6Ω@VGS=-4.5V.
Super high density cell design for extremely
low RDS (ON).
Exceptional on-resistance and maximum DC
current capability.
Full PDF Text Transcription for AFP7001KAS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AFP7001KAS. For precise diagrams, and layout, please refer to the original PDF.
Alfa-MOS Technology General Description AFP7001KAS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. Thes...
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Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP7001KAS 60V P-Channel Enhancement Mode MOSFET Features ID=-0.5A,RDS(ON)=5Ω@VGS=-10V ID=-0.1A,RDS(ON)=6Ω@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection Diode design–in SOT-23 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memorie
AFP7001KAS Datasheet
