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AFP7001KAS - 60V P-Channel MOSFET

This page provides the datasheet information for the AFP7001KAS, a member of the AFP7001KAS-Alfa 60V P-Channel MOSFET family.

Description

AFP7001KAS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • ID=-0.5A,RDS(ON)=5Ω@VGS=-10V.
  • ID=-0.1A,RDS(ON)=6Ω@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD Protection Diode design.
  • in.
  • SOT-23 package design.

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Datasheet Details

Part number AFP7001KAS
Manufacturer Alfa-MOS
File Size 422.30 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet AFP7001KAS Datasheet
Additional preview pages of the AFP7001KAS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP7001KAS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23 ) AFP7001KAS 60V P-Channel Enhancement Mode MOSFET Features  ID=-0.5A,RDS(ON)=5Ω@VGS=-10V  ID=-0.1A,RDS(ON)=6Ω@VGS=-4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  ESD Protection Diode design–in  SOT-23 package design Application  Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
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