AFP7129S Description
AFP7129S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFP7129S 60V P-Channel...
AFP7129S Key Features
- ID=-7A,RDS(ON)= 40mΩ@VGS= -10V
- ID=-6A,RDS(ON)= 50mΩ@VGS= -4.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- DFN3.3X3.3-8L package design
- DC-DC Converter