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AFP7129S - 60V P-Channel MOSFET

This page provides the datasheet information for the AFP7129S, a member of the AFP7129S-Alfa 60V P-Channel MOSFET family.

Description

AFP7129S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • ID=-7A,RDS(ON)= 40mΩ@VGS= -10V.
  • ID=-6A,RDS(ON)= 50mΩ@VGS= -4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

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Datasheet preview – AFP7129S

Datasheet Details

Part number AFP7129S
Manufacturer Alfa-MOS
File Size 360.74 KB
Description 60V P-Channel MOSFET
Datasheet download datasheet AFP7129S Datasheet
Additional preview pages of the AFP7129S datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP7129S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFP7129S 60V P-Channel Enhancement Mode MOSFET Features  ID=-7A,RDS(ON)= 40mΩ@VGS= -10V  ID=-6A,RDS(ON)= 50mΩ@VGS= -4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3.3X3.
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