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AFP7119WS - 200V P-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AFP7119WS, a member of the AFP7119WS-Alfa 200V P-Channel Enhancement Mode MOSFET family.

Description

AFP7119WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • ID=-1.2A,RDS(ON)=0.8 Ω@VGS=-10V.
  • ID=-1.0A,RDS(ON)=0.85 Ω@VGS=-6V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

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Datasheet Details

Part number AFP7119WS
Manufacturer Alfa-MOS
File Size 433.44 KB
Description 200V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP7119WS Datasheet
Additional preview pages of the AFP7119WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP7119WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFP7119WS 200V P-Channel Enhancement Mode MOSFET Features  ID=-1.2A,RDS(ON)=0.8 Ω@VGS=-10V  ID=-1.0A,RDS(ON)=0.85 Ω@VGS=-6V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3.3X3.
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