Alfa-MOS AFP7119WS
200V P-Channel Enhancement Mode MOSFET
| Part No. | AFP7119WS |
|---|---|
| Datasheet | AFP7119WS Download |
| Manufacturer |  Alfa-MOS |
| Description | 200V P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFP7119WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( DFN3.3X3.3-8L ) AFP7119WS 200V P-Channel Enhancement Mode MOSFETFEATURES
● ID=-1.2A,RDS(ON)=0.8 Ω@VGS=-10V● ID=-1.0A,RDS(ON)=0.85 Ω@VGS=-6V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● DFN3.3X3.3-8L package design Application
● DC-DC Converter
● POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D
DESCRIPTION
Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package AFP7119WSFN308RG 7119WS DFN3.3X3.3-8L ※ YY year code ※ MM month code ※ DD date code ※ AFP7119WSFN308RG : 13”Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp.
