Download the AFP7119WS datasheet PDF.
This datasheet also covers the AFP7119WS-Alfa variant, as both devices belong to the same 200v p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
AFP7119WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Key Features
ID=-1.2A,RDS(ON)=0.8 Ω@VGS=-10V.
ID=-1.0A,RDS(ON)=0.85 Ω@VGS=-6V.
Super high density cell design for extremely
low RDS (ON).
Exceptional on-resistance and maximum DC
current capability.
Full PDF Text Transcription for AFP7119WS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AFP7119WS. For precise diagrams, and layout, please refer to the original PDF.
Alfa-MOS Technology General Description AFP7119WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These...
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Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFP7119WS 200V P-Channel Enhancement Mode MOSFET Features ID=-1.2A,RDS(ON)=0.8 Ω@VGS=-10V ID=-1.0A,RDS(ON)=0.85 Ω@VGS=-6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.
AFP7119WS Datasheet
