Download the AFP7127S datasheet PDF.
This datasheet also covers the AFP7127S-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
AFP7127S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Key Features
-30V/-10A,RDS(ON)=17mΩ@VGS=-10V -30V/-7A,RDS(ON)=27mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design.
Full PDF Text Transcription for AFP7127S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AFP7127S. For precise diagrams, and layout, please refer to the original PDF.
Alfa-MOS Technology General Description AFP7127S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These ...
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rench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFP7127S 30V P-Channel Enhancement Mode MOSFET Features -30V/-10A,RDS(ON)=17mΩ@VGS=-10V -30V/-7A,RDS(ON)=27mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.
AFP7127S Datasheet
