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AFP7117WS - 150V P-Channel MOSFET

This page provides the datasheet information for the AFP7117WS, a member of the AFP7117WS-Alfa 150V P-Channel MOSFET family.

Description

AFP7117WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • ID=-1.4A,RDS(ON)=750 mΩ@VGS=-10V.
  • ID=-1.0A,RDS(ON)=800 mΩ@VGS=-6V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

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Datasheet preview – AFP7117WS

Datasheet Details

Part number AFP7117WS
Manufacturer Alfa-MOS
File Size 556.34 KB
Description 150V P-Channel MOSFET
Datasheet download datasheet AFP7117WS Datasheet
Additional preview pages of the AFP7117WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP7117WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFP7117WS 150V P-Channel Enhancement Mode MOSFET Features  ID=-1.4A,RDS(ON)=750 mΩ@VGS=-10V  ID=-1.0A,RDS(ON)=800 mΩ@VGS=-6V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3.3X3.
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