AFP7117WS Datasheet | Alfa-MOS

Description AFP7117WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) 150V P-Channel Enhancement Mode MOSFET Features - ID=-1.4A,RDS(ON)=750 mΩ@VGS=-10V - ID=-1.0A,RDS(ON)=800 mΩ@VGS=-6V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - DFN3.3X3.3-8L package design Application - DC-DC Converter - POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain Ordering Information Part Ordering No. Part Marking Package AFP7117WSFN308RG 7117WS DFN3.3X3.3-8L ※ YY year code ※ MM month code ※ DD date code ※ AFP7117WSFN308RG : 13”Tape & Reel ; Pb- Free ; Halogen - Free ©Alfa-MOS Technology Corp. Rev.F May 2023 Unit Tape & Reel Quantity 5000 EA .alfa-mos. Page 1 Alfa-MOS Technology 150V P-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25℃ Unless otherwise...