AFP7117WS Overview
AFP7117WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFP7117WS 150V P-Channel...
AFP7117WS Key Features
- ID=-1.4A,RDS(ON)=750 mΩ@VGS=-10V
- ID=-1.0A,RDS(ON)=800 mΩ@VGS=-6V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- DFN3.3X3.3-8L package design
- DC-DC Converter