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AS7C331FT18A - 3.3V 1M x 18 Flow-through synchronous SRAM

Description

The AS7C331MFT18A is a high-performance CMOS 16-Mbit synchronous Static Random Access Memory (SRAM) device organized as 1,048,576 words x18 bits.

Fast cycle times of 7.5/8.5/10/12 ns with clock access times (tCD) of 6.8/7.5/8.5/10 ns.

Three chip enable (CE) inputs permit easy memory expansion.

Features

  • Organization: 1,048,576 words x18 bits Fast clock to data access: 6.8/7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available 100-pin TQFP packages Individual byte write and global write.
  • Multiple chip enables for easy expansion 3.3 V core power supply 2.5 V or 3.3V I/O operation with separate.

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Datasheet Details

Part number AS7C331FT18A
Manufacturer Alliance Semiconductor Corporation
File Size 557.96 KB
Description 3.3V 1M x 18 Flow-through synchronous SRAM
Datasheet download datasheet AS7C331FT18A Datasheet
Additional preview pages of the AS7C331FT18A datasheet.

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January 2005 ® AS7C331MFT18A 3.3V 1M x 18 Flow-through synchronous SRAM Features • • • • • • • Organization: 1,048,576 words x18 bits Fast clock to data access: 6.8/7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available 100-pin TQFP packages Individual byte write and global write • • • • • • Multiple chip enables for easy expansion 3.3 V core power supply 2.5 V or 3.3V I/O operation with separate VDDQ Linear or interleaved burst control Common data inputs and data outputs Snooze mode for reduced power-standby www.DataSheet4U.
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