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AS7C33256PFS18B - 3.3V 256K X 18 pipeline burst synchronous SRAM

General Description

The AS7C33256PFS18B is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) devices organized as 262,144 words × 18 bits and incorporate a pipeline for highest frequency on any given technology.

Key Features

  • Organization: 262,144 words × 18 bits Fast clock speeds to 200 MHz Fast clock to data access: 3.0/3.5/4.0 ns Fast OE access time: 3.0/3.5/4.0 ns Fully synchronous register-to-register operation Single-cycle deselect Asynchronous output enable control Available in 100-pin TQFP package.
  • Individual byte write and global write Multiple chip enables for.

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Datasheet Details

Part number AS7C33256PFS18B
Manufacturer Alliance Semiconductor Corporation
File Size 581.84 KB
Description 3.3V 256K X 18 pipeline burst synchronous SRAM
Datasheet download datasheet AS7C33256PFS18B Datasheet

Full PDF Text Transcription for AS7C33256PFS18B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AS7C33256PFS18B. For precise diagrams, and layout, please refer to the original PDF.

December 2004 ® AS7C33256PFS18B 3.3V 256K × 18 pipeline burst synchronous SRAM Features • • • • • • • • Organization: 262,144 words × 18 bits Fast clock speeds to 200 MHz...

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• • Organization: 262,144 words × 18 bits Fast clock speeds to 200 MHz Fast clock to data access: 3.0/3.5/4.0 ns Fast OE access time: 3.0/3.5/4.0 ns Fully synchronous register-to-register operation Single-cycle deselect Asynchronous output enable control Available in 100-pin TQFP package • • • • • • • Individual byte write and global write Multiple chip enables for easy expansion Linear or interleaved burst control Snooze mode for reduced power-standby Common data inputs and data outputs 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ www.DataSheet4U.