• Part: AS4C64M16MD1
  • Manufacturer: Alliance Semiconductor
  • Size: 5.43 MB
Download AS4C64M16MD1 Datasheet PDF
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AS4C64M16MD1 Description

4 banks x 16M x 16 organization - Data Mask for Write Control (DM) - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 3 - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length:.

AS4C64M16MD1 Key Features

  • 4 banks x 16M x 16 organization
  • Data Mask for Write Control (DM)
  • Four Banks controlled by BA0 & BA1
  • Programmable CAS Latency: 2, 3
  • Programmable Wrap Sequence: Sequential
  • Programmable Burst Length
  • Automatic and Controlled Precharge mand
  • Power Down Mode
  • Auto Refresh and Self Refresh
  • Refresh Interval: 8192 cycles/64ms