AS4C64M16MD1 - 1 Gb (64M x 16 bit) 1.8v High Performance Mobile DDR SDRAM

Alliance Semiconductor

General Description

- 4 banks x 16M x 16 organization - Data Mask for Write Control (DM) - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 3 - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length: 2, 4, 8 or 16 for Sequential Type 2, 4, 8 or 16 for Interleave Type - Automa

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AS4C64M16MD1 1 gb (64m x 16 bit) 1.8v high performance mobile ddr sdram by Alliance Semiconductor - Datasheet Preview

Datasheet Details

Part number	AS4C64M16MD1
Manufacturer	Alliance Semiconductor
File Size	5.43 MB
Description	1 Gb (64M x 16 bit) 1.8v High Performance Mobile DDR SDRAM
Datasheet	AS4C64M16MD1 Datasheet

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Other Datasheets by Alliance Semiconductor

Part Number	Description
AS4C64M16MD2-25BCN	SDRAM
AS4C64M16MD2A-25BIN	1G (64M x 16 and 32M x 32) Low Power DDR2 SDRAM
AS4C64M16D1	64M x 16 bit DDR1 Synchronous DRAM
AS4C64M16D1A	1Gb SDRAM
AS4C64M16D1A-6BIN	1Gb SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Revision History AS4C64M16MD1- 60-ball FBGA PACKAGE Revision Rev 1.0 Rev 2.0 Details Preliminary datasheet Add -5 speed grade part number AS4C64M16MD1 Date Darch 2014 August 2017 $OOLDQFH0HPRU,QF7DORU:D6DQ&DUORV&$7(/)$; $OOLDQFH0HPRU,QFUHVHUYHVWKHULJKWWRFKDQJHSURGXFWVRUVSHFLILFDWLRQZLWKRXWQRWLFH Confidential -1- Rev.2.0 Aug 2017 AS4C64M16MD1 1 Gb (64M x 16 bit) 1.