Alliance Semiconductor AS4C64M8D2-25BAN
The 512Mb DDR2 is a high-speed CMOS DoubleData-Rate-Two (DDR2), synchronous dynamic random access memory (SDRAM) containing 512 Mbits in a 8-bit wide data I/Os. It is internally configured as a quad bank DRAM, 4 banks x 16Mb addresses x 8 I/Os.| Part No. | AS4C64M8D2-25BAN |
|---|---|
| Datasheet | AS4C64M8D2-25BAN Download |
| Manufacturer |  Alliance Semiconductor |
| Description | 512M SDRAM |
| Buy | Stock & Price |
FEATURES
● JEDEC Standard Compliant● JEDEC standard 1.8V I/O (SSTL_18-compatible)
● Power supplies: VDD & VDDQ = +1.8V ± 0.1V
● AEC-Q100 Compliant
● Automotive Temperature: TC = -40°C ~105°C
● Supports JEDEC clock jitter specification
● Fully synchronous operation
● Fast clock rate: 400 MHz
● Differential Clock, CK & CK#
● Bidirectional single/differential data strobe
● 4 internal banks for concurrent operation
● 4-bit prefetch architecture
● Internal pipeline architecture
● Precharge & active power down
● Programmable Mode & Extended Mode registers
● Posted CAS# additive latency (AL): 0, 1, 2, 3, 4, 5
● WRITE latency = READ latency - 1 tCK
● Burst lengths: 4 or 8
● Burst type: Sequential / Interleave
● DLL enable/disable
● Off-Chip Driver (OCD) - Impedance Adjustment - Adjustable data-output drive strength
● On-die termination (ODT)
● RoHS compliant
● Auto Refresh and Self Refresh
● 8192 refresh cycles / 64ms - Average refresh period 7.8μs @ -40°C ≦TC≦ +85°C 3.9μs @ +85°C＜TC≦ +105°C...
