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AS4C64M8SC-7TIN - 512M SDRAM

Download the AS4C64M8SC-7TIN datasheet PDF. This datasheet also covers the AS4C16M32SC-7TIN variant, as both devices belong to the same 512m sdram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Fully Synchronous to Positive Clock Edge.
  • Fast clock rate: 133 MHz.
  • Multiple Burst Read with Single Write Operation.
  • Four Banks controlled by BA0 & BA1.
  • Data Mask for Byte Control (x16,x32).
  • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved.
  • Automatic and Controlled Precharge Command.
  • Auto.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AS4C16M32SC-7TIN-AllianceSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AS4C64M8SC-7TIN
Manufacturer Alliance Semiconductor
File Size 1.43 MB
Description 512M SDRAM
Datasheet download datasheet AS4C64M8SC-7TIN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Revision History 512M SDRAM 54/86pin TSOP II Package Revision Details Rev 1.0 Preliminary datasheet AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN Date Sep. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 24 - Rev.1.0 Sep. 2018 AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN 1 Overview This chapter gives an overview of the 512-Mbit Synchronous DRAM component product and describes its main characteristics. 1.