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AS4C64M8SC-7TIN - 512M SDRAM

This page provides the datasheet information for the AS4C64M8SC-7TIN, a member of the AS4C16M32SC-7TIN 512M SDRAM family.

Datasheet Summary

Features

  • Fully Synchronous to Positive Clock Edge.
  • Fast clock rate: 133 MHz.
  • Multiple Burst Read with Single Write Operation.
  • Four Banks controlled by BA0 & BA1.
  • Data Mask for Byte Control (x16,x32).
  • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved.
  • Automatic and Controlled Precharge Command.
  • Auto.

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Datasheet preview – AS4C64M8SC-7TIN

Datasheet Details

Part number AS4C64M8SC-7TIN
Manufacturer Alliance Semiconductor
File Size 1.43 MB
Description 512M SDRAM
Datasheet download datasheet AS4C64M8SC-7TIN Datasheet
Additional preview pages of the AS4C64M8SC-7TIN datasheet.

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Full PDF Text Transcription

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Revision History 512M SDRAM 54/86pin TSOP II Package Revision Details Rev 1.0 Preliminary datasheet AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN Date Sep. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 24 - Rev.1.0 Sep. 2018 AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN 1 Overview This chapter gives an overview of the 512-Mbit Synchronous DRAM component product and describes its main characteristics. 1.
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