AS4LC256K16E0
AS4LC256K16E0 is 3.3V 256K X 16 CMOS DRAM (EDO) manufactured by Alliance Semiconductor.
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AS4LC256K16EO
®
3.3V 256K X 16 CMOS DRAM (EDO) Features
- Organization: 262,144 words × 16 bits
- High speed
- 45/60 ns RAS access time
- 10/12/15/20 ns column address access time
- 7/10/10 ns CAS access time
- Low power consumption
- EDO page mode
- 5V I/O tolerant
- 512 refresh cycles, 8 ms refresh interval
- RAS-only or CAS-before-RAS refresh or self refresh
- Read-modify-write
- LVTTL-patible, three-state I/O
- JEDEC standard packages
- Active: 280 mW max (AS4LC256K16EO-35)
- Standby: 2.8 mW max, CMOS I/O (AS4LC256K16EO35)
- 400 mil, 40-pin SOJ
- 400 mil, 40/44-pin TSOP II
- 3.3V power supply
- Latch-up current > 200 mA
Pin arrangement
Vcc I/O0 I/O1...
