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AO4490 - N-Channel MOSFET

General Description

The AO4490 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a load switch and general purpose applications.

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AO4490 30V N-Channel MOSFET General Description The AO4490 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. Product Summary VDS (V) = 30V ID = 16A (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View G G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current G Repetitive avalanche energy L=0.