Datasheet Details
| Part number | AO4492 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 466.65 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4492-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AO4492 30V N-Channel MOSFET General.
| Part number | AO4492 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 466.65 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4492-AlphaOmegaSemiconductors.pdf |
|
|
|
The AO4492 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 14A < 9.5mΩ < 14mΩ Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL D G S Maximum 30 ±20 14 11.4 100 20 20 3.1 2 -55 to 150 Typ Max 31 40 59 75 16 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 4: Nov 2011 www.aosmd.com Page 1 of 6 AO4492 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.7 2.2 V ID(ON) On state drain current VGS=10V, VDS=5V 100 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=14A TJ=125°C 7.6 9.5 mΩ 11 13 VGS=4.5V, ID=11A 11 14 mΩ gFS Forward Transconductance VDS=5V, ID=14A 43 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V IS Maximum Body-Diode Continuous Current 3 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate re
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4492 | N-Channel MOSFET | Kexin |
 |
AO4492 | 30V N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4490 | N-Channel MOSFET |
| AO4494 | 30V N-Channel MOSFET |
| AO4496 | 30V N-Channel MOSFET |
| AO4498 | 30V N-Channel MOSFET |
| AO4498E | 30V N-Channel MOSFET |
| AO4400 | N-Channel MOSFET |
| AO4401 | P-Channel MOSFET |
| AO4402 | 20V N-Channel MOSFET |
| AO4402G | 20V N-Channel MOSFET |
| AO4403 | 30V P-Channel MOSFET |