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AO4498
30V N-Channel MOSFET
General Description
The AO4498 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS (V) = 30V ID = 18A RDS(ON) < 5.5mW RDS(ON) < 7.5mW
(VGS = 10V) (VGS = 10V) (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
SOIC-8
Top View
Bottom View
D
D D
D
D
G
S S S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC=25°C TC=70°C
ID
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.