Datasheet Details
| Part number | AO4498 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 266.19 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4498-AlphaOmegaSemiconductors.pdf |
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Overview: AO4498 30V N-Channel MOSFET General.
| Part number | AO4498 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 266.19 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AO4498-AlphaOmegaSemiconductors.pdf |
|
|
|
The AO4498 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS (V) = 30V ID = 18A RDS(ON) < 5.5mW RDS(ON) < 7.5mW (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR Power Dissipation B TC=25°C TC=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 18 14 140 42 88 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 31 59 40 75 Maximum Junction-to-Lead Steady-State RqJL 16 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 1.1: March 2024 www.aosmd.com Page 1 of 6 AO4498 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 36.5 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.3 1.8 2.5 V ID(ON) On state drain current VGS=10V, VDS=5V 140 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A TJ=125°C 4.6 5.5 mW 6.6 8 VGS=4.5V, ID=16A 6 7.5 mW gFS Forward Transconductance VDS=5V, ID=18A 53 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 4 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capac
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4498 | N-Channel MOSFET | Kexin |
 |
AO4498 | 30V N-Channel MOSFET | VBsemi |
|
AO4498E | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4498E | 30V N-Channel MOSFET |
| AO4490 | N-Channel MOSFET |
| AO4492 | 30V N-Channel MOSFET |
| AO4494 | 30V N-Channel MOSFET |
| AO4496 | 30V N-Channel MOSFET |
| AO4400 | N-Channel MOSFET |
| AO4401 | P-Channel MOSFET |
| AO4402 | 20V N-Channel MOSFET |
| AO4402G | 20V N-Channel MOSFET |
| AO4403 | 30V P-Channel MOSFET |