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AO4498E - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 18 A (VGS = 10V).
  • RDS(ON) ＜ 5.8mΩ (VGS = 10V).
  • RDS(ON) ＜ 8.5mΩ (VGS = 4.5V).
  • ESD Rating: 2KV HBM SOP-8 +0.04 0.21 -0.02 D G S MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resi.

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SMD Type N-Channel MOSFET AO4498E (KO4498E) ■ Features ● VDS (V) = 30V ● ID = 18 A (VGS = 10V) ● RDS(ON) ＜ 5.8mΩ (VGS = 10V) ● RDS(ON) ＜ 8.5mΩ (VGS = 4.5V) ● ESD Rating: 2KV HBM SOP-8 +0.04 0.21 -0.02 D G S MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating 30 ±20 18 14 120 3.1 2 40 75 24 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.