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AO4498 Datasheet 30v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4498 30V N-Channel MOSFET General.

General Description

The AO4498 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Product Summary VDS (V) = 30V ID = 18A RDS(ON) < 5.5mW RDS(ON) < 7.5mW (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR Power Dissipation B TC=25°C TC=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 18 14 140 42 88 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Max Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State RqJA 31 59 40 75 Maximum Junction-to-Lead Steady-State RqJL 16 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 1.1: March 2024 .aosmd.

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