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AO4498E Datasheet 30v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4498E 30V N-Channel MOSFET General.

General Description

The AO4498E bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 18A < 5.8mΩ < 8.5mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D G G S S S S Bottom View D Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C C TA=25° Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG Maximum 30 ±20 18 14 120 3.1 2 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev 1: November 2009 .aosmd.

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