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AO4620 - 30V Dual P + N-Channel MOSFET

General Description

The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in inverter and other applications.

Key Features

  • n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 24mW (VGS=10V) < 36mW (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 32mW (VGS = -10V) < 55mW (VGS = -4.5V) 100% UIS tested 100% Rg tested Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C 7.2 Current F TA=70°C ID.

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AO4620 30V Dual P + N-Channel MOSFET General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 24mW (VGS=10V) < 36mW (VGS=4.5V) p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 32mW (VGS = -10V) < 55mW (VGS = -4.5V) 100% UIS tested 100% Rg tested Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C 7.2 Current F TA=70°C ID 6.