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AO4600 - MOSFET

General Description

The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel p-channel -30V VDS (V) = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 www. DataSheet4U. com G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 30 DS VGS Gate-Source Voltage ±12 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Ma.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4600 Complementary Enhancement Mode Field Effect Transistor General Description The AO4600 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO4600 is Pb-free (meets ROHS & Sony 259 specifications). AO4600L is a Green Product ordering option. AO4600 and AO4600L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 6.9A (VGS = 10V) -5A (VGS = -10V) RDS(ON) < 27mΩ < 49mΩ (VGS =- 10V) < 32mΩ < 64mΩ (VGS =- 4.5V) < 50mΩ < 120mΩ (VGS = -2.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 www.DataSheet4U.