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AO4604 - MOSFET

General Description

The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge.

The complementary MOSFETs may be used in power inverters, and other applications.

AO4604 and AO4604L are electrically identical.

Key Features

  • n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 87mΩ (VGS = -4.5V) 100% Rg Tested! SOIC-8 D2 D1 Top View Bottom View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 G2 S2 n-channel G1 S1 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain TA=25°C Current A TA=70.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4604 Complementary Enhancement Mode Field Effect Transistor General Description The AO4604 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications. AO4604 and AO4604L are electrically identical. -RoHS Compliant -AO4604L is Halogen Free Features n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 87mΩ (VGS = -4.