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AO4607 - MOSFET

General Description

The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge.

The complementary MOSFETs may be used in inverter and other applications.

A Schottky diode is co-packaged with the nchannel FET to minimize body diode losses.

Key Features

  • n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -6A (VGS=1-0V) RDS(ON) < 35mΩ (VGS = -10V) < 58mΩ (VGS =- 4.5V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4607 Complementary Enhancement Mode Field Effect Transistor General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the nchannel FET to minimize body diode losses. AO4607 is Pb-free (meets ROHS & Sony 259 specifications). AO4607L is a Green Product ordering option. AO4607 and AO4607L are electrically identical. S2/A G2 S1 G1 www.DataSheet4U.com Features n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -6A (VGS=1-0V) RDS(ON) < 35mΩ (VGS = -10V) < 58mΩ (VGS =- 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.