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AO4601 - MOSFET

Datasheet Summary

Description

The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Standard Product AO4601 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±25 -8 -6.9 -50 2 1.44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG ±12 4.7 4 30 2 1.44 -55 to 150 W °C Junction and Storage.

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Datasheet Details

Part number AO4601
Manufacturer Alpha & Omega Semiconductors
File Size 330.84 KB
Description MOSFET
Datasheet download datasheet AO4601 Datasheet
Additional preview pages of the AO4601 datasheet.

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Full PDF Text Transcription

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AO4601 Complementary Enhancement Mode Field Effect Transistor General Description The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4601 is Pb-free (meets ROHS & Sony 259 specifications). AO4601L is a Green Product ordering option. AO4601 and AO4601L are n-channel p-channel -30V VDS (V) = 30V ID = 4.7A (VGS=10V) -8A (VGS = -20V) RDS(ON) RDS(ON) < 55m Ω (VGS=10V) < 18mΩ (VGS = -20V) < 70m Ω (VGS=4.5V) < 19mΩ (VGS = -10V) < 110m Ω (VGS = 2.5V) Features D2 S2 G2 S1 G1 www.DataSheet4U.
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