AO4609 - MOSFET

Product Overview

Alpha & Omega Semiconductors

Part number	AO4609
Manufacturer	Alpha & Omega Semiconductors
File Size	401.47 KB
Description	MOSFET
Datasheet	AO4609 Datasheet
Additional preview pages of the AO4609 datasheet.

The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

n-channel p-channel -30V VDS (V) = 30V ID = 8.5A -3A RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 130mΩ (VGS = 10V) < 28mΩ (VGS=4.5V) < 180mΩ (VGS = 4.5V) < 260mΩ (VGS = 2.5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-.

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Published: Jun 7, 2007 |