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AO4621 - MOSFET

Datasheet Summary

Description

The AO4621 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AO4621 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31m Ω (VGS=10V) < 45m Ω (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Max p-channel -40 ±20 -5 -4 -20 2 1.28 -55 to 150 W °C A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain.

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Datasheet Details

Part number AO4621
Manufacturer Alpha & Omega Semiconductors
File Size 166.47 KB
Description MOSFET
Datasheet download datasheet AO4621 Datasheet
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AO4621 Complementary Enhancement Mode Field Effect Transistor General Description The AO4621 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4621 is Pb-free (meets ROHS & Sony 259 specifications). AO4621L is a Green Product ordering option. AO4621 and AO4621L are electrically identical. Features n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31m Ω (VGS=10V) < 45m Ω (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Max p-channel -40 ±20 -5 -4 -20 2 1.
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