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AO4621 - MOSFET

General Description

The AO4621 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Standard Product AO4621 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31m Ω (VGS=10V) < 45m Ω (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Max p-channel -40 ±20 -5 -4 -20 2 1.28 -55 to 150 W °C A Units V V Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 Gate-Source Voltage Continuous Drain.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4621 Complementary Enhancement Mode Field Effect Transistor General Description The AO4621 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4621 is Pb-free (meets ROHS & Sony 259 specifications). AO4621L is a Green Product ordering option. AO4621 and AO4621L are electrically identical. Features n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 31m Ω (VGS=10V) < 45m Ω (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) < 63mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Max p-channel -40 ±20 -5 -4 -20 2 1.