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AO4816 - Dual N-Channel MOSFET

Datasheet Summary

Description

The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

This dual device is suitable for use as a load switch or in PWM applications.

Standard Product AO4816 is Pbfree (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 20V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 46mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www. DataSheet4U. com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C B Pulsed Drain Current IDM Power Dissipation TA=25°C TA=70°C PD TJ, TSTG Maximum 30 ±25 8.5 6.5 40 2 1.28 -55 to 150 Units V V A.

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Datasheet Details

Part number AO4816
Manufacturer Alpha & Omega Semiconductors
File Size 159.54 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AO4816 Datasheet
Additional preview pages of the AO4816 datasheet.

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Full PDF Text Transcription

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AO4816 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4816 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This dual device is suitable for use as a load switch or in PWM applications. Standard Product AO4816 is Pbfree (meets ROHS & Sony 259 specifications). AO4816L is a Green Product ordering option. AO4816 and AO4816L are electrically identical. Features VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 20V) RDS(ON) < 20mΩ (VGS = 10V) RDS(ON) < 46mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www.DataSheet4U.
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