Datasheet Summary
AO4817 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4817 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4817 is Pb-free (meets ROHS & Sony 259 specifications). AO4817L is a Green Product ordering option. AO4817 and AO4817L are electrically identical.
Features
VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 21mΩ (VGS = -10V) ESD Rating: 1.5KV HBM
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D2
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G1 S1
G2 S2
SOIC-8
Absol...
