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AO7402 - N-Channel MOSFET

Datasheet Summary

Description

The AO7402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint.

Features

  • VDS (V) = 20V ID = 1.6 A (V GS = 4.5V) RDS(ON) < 90mΩ (VGS = 4.5V) RDS(ON) < 105mΩ (VGS = 2.5V) RDS(ON) < 130mΩ (VGS = 1.8V) D Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 1.6 1.2 10 0.35 0.22 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristi.

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Datasheet Details

Part number AO7402
Manufacturer Alpha & Omega Semiconductors
File Size 126.70 KB
Description N-Channel MOSFET
Datasheet download datasheet AO7402 Datasheet
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Full PDF Text Transcription

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AO7402 N-Channel Enhancement Mode Field Effect Transistor General Description The AO7402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. Standard Product AO7402 is Pb-free (meets ROHS & Sony 259 specifications). AO7402L is a Green Product ordering option. AO7402 and AO7402L are electrically identical. SC-70 (SOT-323) Top View G D S G S Features VDS (V) = 20V ID = 1.6 A (V GS = 4.5V) RDS(ON) < 90mΩ (VGS = 4.5V) RDS(ON) < 105mΩ (VGS = 2.5V) RDS(ON) < 130mΩ (VGS = 1.
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