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AO7404 - N-Channel MOSFET

General Description

The AO7404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint.

Key Features

  • VDS (V) = 20V ID = 1 A (VGS = 4.5V) RDS(ON) < 225mΩ (VGS = 4.5V) RDS(ON) < 290mΩ (VGS = 2.5V) RDS(ON) < 425mΩ (VGS = 1.8V) SC-70 (SOT-323) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 1 0.75 5 0.35 0.22 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temper.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO7404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO7404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.It is ESD protected to 1KV HBM. Standard Product AO7404 is Pb-free (meets ROHS & Sony 259 specifications). AO7404L is a Green Product ordering option. AO7404 and AO7404L are electrically identical. Features VDS (V) = 20V ID = 1 A (VGS = 4.5V) RDS(ON) < 225mΩ (VGS = 4.5V) RDS(ON) < 290mΩ (VGS = 2.5V) RDS(ON) < 425mΩ (VGS = 1.