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AO7404 - N-Channel MOSFET

Datasheet Summary

Description

The AO7404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint.

Features

  • VDS (V) = 20V ID = 1 A (VGS = 4.5V) RDS(ON) < 225mΩ (VGS = 4.5V) RDS(ON) < 290mΩ (VGS = 2.5V) RDS(ON) < 425mΩ (VGS = 1.8V) SC-70 (SOT-323) Top View G D S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 ±8 1 0.75 5 0.35 0.22 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temper.

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Datasheet preview – AO7404

Datasheet Details

Part number AO7404
Manufacturer Alpha & Omega Semiconductors
File Size 1.62 MB
Description N-Channel MOSFET
Datasheet download datasheet AO7404 Datasheet
Additional preview pages of the AO7404 datasheet.

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Full PDF Text Transcription

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AO7404 N-Channel Enhancement Mode Field Effect Transistor General Description The AO7404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.It is ESD protected to 1KV HBM. Standard Product AO7404 is Pb-free (meets ROHS & Sony 259 specifications). AO7404L is a Green Product ordering option. AO7404 and AO7404L are electrically identical. Features VDS (V) = 20V ID = 1 A (VGS = 4.5V) RDS(ON) < 225mΩ (VGS = 4.5V) RDS(ON) < 290mΩ (VGS = 2.5V) RDS(ON) < 425mΩ (VGS = 1.
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