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AO7403 - P-Channel MOSFET

General Description

The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint.

Key Features

  • VDS (V) = -20V ID = -0.7A (VGS = -4.5V) RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.8V) D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A Maximum -20 ±8 -0.7 -0.5 -3 0.35 0.22 -55 to 150 Units V V A TA=25°C TA=70°C ID IDM PD TJ, TSTG TA=70°C W °C Junction and Storage Temperature Range Thermal Char.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO7403 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM. Standard Product AO7403 is Pb-free (meets ROHS & Sony 259 specifications). AO7403L is a Green Product ordering option. AO7403 and AO7403L are electrically identical. SC-70 (SOT-323) Top View G D S G S Features VDS (V) = -20V ID = -0.7A (VGS = -4.5V) RDS(ON) < 470mΩ (VGS = -4.5V) RDS(ON) < 625mΩ (VGS = -2.5V) RDS(ON) < 900mΩ (VGS = -1.