AO8832 - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Product Overview

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO8832
Manufacturer	Alpha & Omega Semiconductors
File Size	165.34 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8832 Datasheet
Additional preview pages of the AO8832 datasheet.

Product details

Description

The AO8832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

Features

VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 31mΩ (VGS = 3.6V) RDS(ON) < 39mΩ (VGS = 2.5V) D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6KΩ G2 1.6KΩ D2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±12 7 5.5 30 1.5 0.96 -55 to 150 Units V V A TA=25°.

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Other Datasheets by Alpha & Omega Semiconductors

AO8830 - Dual N-Channel MOSFET
AO8801 - Dual P-Channel Enhancement Mode Field Effect Transistor
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AO8803 - Dual P-Channel Enhancement Mode Field Effect Transistor
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Published: Aug 29, 2009 |