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AO8830 Datasheet Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: .. AO8830 mon-Drain Dual N-Channel Enhancement Mode Field Effect.

General Description

The AO8830 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its mondrain configuration.

Key Features

  • VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 41mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6KΩ G2 1.6KΩ D2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A Maximum 20 ±12 6 4.8 30 1.5 0.94.

More Datasheets from Alpha & Omega Semiconductors

Part Number Description
AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor
AO8801A 20V P-Channel MOSFET
AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor
AO8807 Dual P-Channel FET
AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor
AO8808A 20V Dual N-Channel MOSFET
AO8810 20V Common-Drain Dual N-Channel MOSFET
AO8814 20V Common-Drain Dual N-Channel MOSFET
AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8830 Distributor