Datasheet Details
| Part number | AOB280A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 406.30 KB |
| Description | N-Channel Power Transistor |
| Download |
AOB280A60L Download (PDF)
|
|
|
| Part number | AOB280A60L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 406.30 KB |
| Description | N-Channel Power Transistor |
| Download |
AOB280A60L Download (PDF)
|
|
|
|
• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC,Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-220 TO-220F TO-263 D2PAK D 700V 56A < 0.28Ω 23.5nC 3.1mJ D S D G GD S S G G AOT280A60L AOTF280A60L AOB280A60L S Orderable Part Number AOTF280A60L AOT280A60L AOB280A60L Package Type TO-220F Green TO-220 Green TO-263 Green Form Tube Tube Tape&Reel Minimum Order Quantity 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT(B)280A60L AOTF280A60L Drain-Source Voltage VDS 600 Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS VGS ID IDM IAR EAR EAS dv/dt ±20 ±30 14 14* 9 9* 56 3.6 6.5 60 100 20 TC=25°C Power Dissipation B Derate above 25°C PD 156 30 1.3 0.2 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOT(B)280A60L 65 0.5 0.8 AOTF280A60L 65 -4.2 Units °C/W °C/W °C/W Rev.3.1: May 2024 www.aosmd.com Page 1 of 6 AOTF280A60L/AOT280A60L/AOB280A60L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDS
AOTF280A60L/AOT280A60L/AOB280A60L 600V, a MOS5 TM N-Channel Power Transistor.
| Part Number | Description |
|---|---|
| AOB280L | 80V N-Channel MOSFET |
| AOB282L | 80V N-Channel MOSFET |
| AOB284L | 80V N-Channel MOSFET |
| AOB286L | 80V N-Channel MOSFET |
| AOB288L | 80V N-Channel MOSFET |
| AOB20B65M1 | IGBT |
| AOB20S60 | Power Transistor |
| AOB20S60L | Power Transistor |
| AOB210L | 30V N-Channel MOSFET |
| AOB2140L | 40V N-Channel MOSFET |