Datasheet Details
| Part number | AOB288L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 430.20 KB |
| Description | 80V N-Channel MOSFET |
| Download |
AOB288L Download (PDF)
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| Part number | AOB288L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 430.20 KB |
| Description | 80V N-Channel MOSFET |
| Download |
AOB288L Download (PDF)
|
|
|
|
Product Summary The AOT288L & AOB288L & AOTF288L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 80V 46A / 43A < 9.2mW(< 8.9mW*) <12.5mW(< 12.2mW*) D G AOT288L DS G AOTF288L S GD S G AOB288L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT288L/AOB288L AOTF288L Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 80 ±20 46 43 36 30 160 10.5 8 35 61 93.5 35.5 46.5 17.5 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC AOT288L/AOB288L 15 60 1.6 AOTF288L 15 60 4.2 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: May 2024 www.aosmd.com Page 1 of 7 AOT288L/AOB288L/AOTF288L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance Conditions
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOB288L | N-Channel MOSFET | INCHANGE |
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