Datasheet Details
| Part number | AOB2904 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 657.38 KB |
| Description | N-Channel MOSFET |
| Download |
AOB2904 Download (PDF)
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| Part number | AOB2904 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 657.38 KB |
| Description | N-Channel MOSFET |
| Download |
AOB2904 Download (PDF)
|
|
|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100V 120A < 4.4mW < 5.5mW < 4.2mW* < 5.2mW* Applications • Industrial • BMS battery protection • Synchronous Rectifiers in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested TO-263 TO220 D2PAK Top View Bottom View Top View Bottom View D D D D D G DS AOT2904 S DG Orderable Part Number AOT2904 AOB2904 Package Type TO-220 TO-263 S G GG S S AOB2904 Form Tube Tape & Reel Minimum Order Quantity 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10μs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 120 120 425 29 23 77 296 120 326 163 8.3 5.3 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case Steady-State * Surface mount package TO263(AOB2904) Symbol RqJA RqJC Typ 12 50 0.36 Max 15 60 0.46 Units °C/W °C/W °C/W Rev.2.0: August 2020 www.aosmd.com Page 1 of 6 AOT2904/AOB2904 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.3 VGS=10V, ID=20A TO-220 TJ=125°C R
AOT2904/AOB2904 100V N-Channel AlphaSGT TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOB2904 | N-Channel MOSFET | INCHANGE |
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