Datasheet Details
| Part number | AOB298L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 440.15 KB |
| Description | 100V N-Channel MOSFET |
| Download |
AOB298L Download (PDF)
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| Part number | AOB298L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 440.15 KB |
| Description | 100V N-Channel MOSFET |
| Download |
AOB298L Download (PDF)
|
|
|
|
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 58A/33A < 14.5mΩ Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Notebook Adaptor, TV Power Supply applications 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D D AOT298L DS G AOTF298L S GD Orderable Part Number Package Type AOT298L AOB298L AOTF298L TO-220 TO-263 TO-220F G AOB298L Form Tube Tape & Reel Tube G S S Minimum Order Quantity 1000 800 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT298L/AOB298L AOTF298L Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C ID IDM 58 41 130 33 26 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10µs IDSM IAS, IAR EAS, EAR VSPIKE 9 7 20 20 120 TC=25°C Power Dissipation B TC=100°C PD 100 33 50 16 TA=25°C Power Dissipation A TA=70°C PDSM 2.1 1.33 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC AOT298L/AOB298L 15 60 1.5 AOTF298L 15 60 4.5 Units °C/W °C/W °C/W Rev.4.0: July 2016 www.aosmd.com Page 1 of 7 AOT298L/AOB298L/AOTF298L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A
AOT298L/AOB298L/AOTF298L 100V N-Channel AlphaSGT TM General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOB298L | N-Channel MOSFET | INCHANGE |
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