Datasheet Details
| Part number | AOB290L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 360.01 KB |
| Description | 100V N-Channel MOSFET |
| Download |
AOB290L Download (PDF)
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| Part number | AOB290L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 360.01 KB |
| Description | 100V N-Channel MOSFET |
| Download |
AOB290L Download (PDF)
|
|
|
|
Product Summary The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 100V 140A < 3.5mW (< 3.2mW*) Top View D TO220 Bottom View D TO-263 Top View Bottom View D D G DS AOT290L S DG S G AOB290L G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike I 10μs IDSM IAS, IAR EAS, EAR VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 140 110 500 18 15 100 500 120 500 250 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263 t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 50 0.25 Max 15 60 0.3 D S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.4.1: May 2024 www.aosmd.com Page 1 of 6 AOT290L/AOB290L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Thres
AOT290L/AOB290L 100V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOB290L | N-Channel MOSFET | INCHANGE |
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