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AOC3860C Datasheet 12v Common-drain Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOC3860C 12V Common-Drain Dual N-Channel MOSFET General.

General Description

• Trench Power MOSFET technology • Ultra low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Applications • Battery protection switch • Mobile device battery charging and discharging Typical ESD protection 12V < 3.5mΩ < 3.75mΩ < 4.3mΩ < 5mΩ HBM Class 2 AlphaDFNTM 3.05x1.77B_6 Top View Bottom View Top View S2 G2 S2 Pin1 Orderable Part Number AOC3860C S1 Pin1 Package Type AlphaDFNTM 3.05x1.77B_6 G1 G2 G1 S1 S1 S2 Form Tape & Reel Minimum Order Quantity 8000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 VGS TA=25°C IS ISM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 25 100 3.1 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RqJA Note 1.

Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.

Note 2.

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