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AOC3860C - 12V Common-Drain Dual N-Channel MOSFET

Description

Trench Power MOSFET technology Ultra low RSS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS

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AOC3860C 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Applications • Battery protection switch • Mobile device battery charging and discharging Typical ESD protection 12V < 3.5mΩ < 3.75mΩ < 4.3mΩ < 5mΩ HBM Class 2 AlphaDFNTM 3.05x1.77B_6 Top View Bottom View Top View S2 G2 S2 Pin1 Orderable Part Number AOC3860C S1 Pin1 Package Type AlphaDFNTM 3.05x1.
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