Datasheet4U Logo Datasheet4U.com

AOC3868 - 12V Common-Drain Dual N-Channel MOSFET

Description

Trench Power MOSFET technology Low RSS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Applications Battery protection switch Mobil

📥 Download Datasheet

Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AOC3868 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.7V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 5mΩ < 5.3mΩ < 5.5mΩ < 6mΩ < 7mΩ HBM Class 3A AlphaDFN 2.7x1.81A_6 Top View Bottom View Top View Bottom View Pin1 Pin1 Orderable Part Number AOC3868 Pin1 1 3 S1 G1 S1 G1 G2 S2 G2 S2 6 4 S1 S2 Package Type AlphaDFN 2.7x1.
Published: |