Datasheet Details
| Part number | AOC3868 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 367.00 KB |
| Description | 12V Common-Drain Dual N-Channel MOSFET |
| Download | AOC3868 Download (PDF) |
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Overview: AOC3868 12V Common-Drain Dual N-Channel MOSFET General.
| Part number | AOC3868 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 367.00 KB |
| Description | 12V Common-Drain Dual N-Channel MOSFET |
| Download | AOC3868 Download (PDF) |
|
|
|
• Trench Power MOSFET technology • Low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.7V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 5mΩ < 5.3mΩ < 5.5mΩ < 6mΩ < 7mΩ HBM Class 3A AlphaDFN 2.7x1.81A_6 Top View Bottom View Top View Bottom View Pin1 Pin1 Orderable Part Number AOC3868 Pin1 1 3 S1 G1 S1 G1 G2 S2 G2 S2 6 4 S1 S2 Package Type AlphaDFN 2.7x1.81A_6 Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 VGS TA=25°C IS ISM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 20 80 2.5 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RθJA Note 1.
Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.
Note 2.
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