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AOC3870 - 12V Common-Drain Dual N-Channel MOSFET

Description

Trench Power MOSFET technology Low RSS(ON) With ESD protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Applications Battery protection switch Mobil

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AOC3870 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 2.8mΩ < 3mΩ < 3.2mΩ < 3.7mΩ < 4.7mΩ HBM Class 2 AlphaDFN 3.01x1.52_10 Top View Bottom View Pin1 G1 G2 Pin1 1, 2, 7, 8: Source(FET1) 5: Gate(FET1) 3, 4, 9, 10: Source(FET2) 6: Gate(FET2) S1 S2 Orderable Part Number AOC3870 Package Type AlphaDFN 3.01x1.
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