Datasheet Details
| Part number | AOC3870 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 432.48 KB |
| Description | 12V Common-Drain Dual N-Channel MOSFET |
| Download | AOC3870 Download (PDF) |
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Overview: AOC3870 12V Common-Drain Dual N-Channel MOSFET General.
| Part number | AOC3870 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 432.48 KB |
| Description | 12V Common-Drain Dual N-Channel MOSFET |
| Download | AOC3870 Download (PDF) |
|
|
|
• Trench Power MOSFET technology • Low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=4.0V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 2.8mΩ < 3mΩ < 3.2mΩ < 3.7mΩ < 4.7mΩ HBM Class 2 AlphaDFN 3.01x1.52_10 Top View Bottom View Pin1 G1 G2 Pin1 1, 2, 7, 8: Source(FET1) 5: Gate(FET1) 3, 4, 9, 10: Source(FET2) 6: Gate(FET2) S1 S2 Orderable Part Number AOC3870 Package Type AlphaDFN 3.01x1.52_10 Form Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 VGS TA=25°C IS ISM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 25 130 2.2 -55 to 150 Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RθJA Note 1.
Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.
Note 2.
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| Part Number | Description |
|---|---|
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