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AOCA24106E Datasheet Dual N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOCA24106E 12V Common-Drain Dual N-Channel MOSFET General.

General Description

• Trench Power MOSFET Technology • Low RSS(ON) • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 5.6mΩ < 6mΩ < 7mΩ < 8.5mΩ HBM Class 3A AlphaDFNTM 1.9x1.6_6 Top View Bottom View PIN1 Top View PIN1 Bottom View 1, 3: Source(FET1) 2: Gate(FET1) 4, 6: Source(FET2) 5: Gate(FET2) Orderable Part Number AOCA24106E Package Type AlphaDFNTM 1.9x1.6_6 Form Tape & Reel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS IS ISM PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 20 100 2.7 -55 to 150 Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RθJA Note 1.

Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.

Note 2.

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