Datasheet4U Logo Datasheet4U.com

AOCR36116E - 24V Common-Drain Dual N-Channel MOSFET

Datasheet Summary

Description

Trench Power MOSFET technology Ultra low RSS(ON) Common drain configuration for design simplicity With ESD protection to improve battery performance and …..safety RoHS 2.0 and Halogen-Free Compliant Applications Battery protection switch

📥 Download Datasheet

Datasheet preview – AOCR36116E

Datasheet Details

Part number AOCR36116E
Manufacturer Alpha & Omega Semiconductors
File Size 568.04 KB
Description 24V Common-Drain Dual N-Channel MOSFET
Datasheet download datasheet AOCR36116E Datasheet
Additional preview pages of the AOCR36116E datasheet.

📁 Similar Datasheet

  • AOC-12S - AC-DC Power Module (Arch Electronics)
  • AOC-14S - AC-DC Power Module (Arch Electronics)
  • AOC-15S - AC-DC Power Module (Arch Electronics)
  • AOC-24S - AC-DC Power Module (Arch Electronics)
  • AOC-3.3S - AC-DC Power Module (Arch Electronics)
  • AOC-5S - AC-DC Power Module (Arch Electronics)
  • AOC-8S - AC-DC Power Module (Arch Electronics)
  • AOC-9S - AC-DC Power Module (Arch Electronics)
  • AOC128128A0-1.50W - OLED (ORIENT DISPLAY)
  • AOC160128A0-1.45W - OLED (ORIENT DISPLAY)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AOCR36116E 24V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configuration for design simplicity • With ESD protection to improve battery performance and …..safety • RoHS 2.0 and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 24V < 2.4mΩ < 2.8mΩ < 3.5mΩ < 4.8mΩ HBM Class 2 MRigidCSPTM 2.2x2.7_10 Top View Bottom View Pin1 Top View 9 76 10 8 3 5 G1 12 4 Pin1 2,3,4,5. Source1(FET1) 7,8,9.10 Source2(FET2) 1. Gate1 (FET1) 6.
Published: |