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AOCR36116E - 24V Common-Drain Dual N-Channel MOSFET

General Description

Trench Power MOSFET technology Ultra low RSS(ON) Common drain configuration for design simplicity With ESD protection to improve battery performance and …..safety RoHS 2.0 and Halogen-Free Compliant Applications Battery protection switch

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AOCR36116E 24V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(ON) • Common drain configuration for design simplicity • With ESD protection to improve battery performance and …..safety • RoHS 2.0 and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 24V < 2.4mΩ < 2.8mΩ < 3.5mΩ < 4.8mΩ HBM Class 2 MRigidCSPTM 2.2x2.7_10 Top View Bottom View Pin1 Top View 9 76 10 8 3 5 G1 12 4 Pin1 2,3,4,5. Source1(FET1) 7,8,9.10 Source2(FET2) 1. Gate1 (FET1) 6.