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AOI452 - N-Channel MOSFET

Datasheet Summary

Description

The AOI452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOI452 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.7 mΩ (VGS = 10V) RDS(ON) < 14.7 mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested IPAK D GD S Top View Drain Connected to Tab G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C.

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Datasheet preview – AOI452

Datasheet Details

Part number AOI452
Manufacturer Alpha & Omega Semiconductors
File Size 470.64 KB
Description N-Channel MOSFET
Datasheet download datasheet AOI452 Datasheet
Additional preview pages of the AOI452 datasheet.

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Full PDF Text Transcription

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AOI452 N-Channel Enhancement Mode Field Effect Transistor General Description The AOI452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOI452 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 8.7 mΩ (VGS = 10V) RDS(ON) < 14.7 mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested IPAK D GD S Top View Drain Connected to Tab G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.
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