Datasheet Details
| Part number | AOK53S60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 537.29 KB |
| Description | 600V 53A MOS Power Transistor |
| Download | AOK53S60 Download (PDF) |
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Overview: AOK53S60 600V 53A α MOS TM Power Transistor General.
| Part number | AOK53S60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 537.29 KB |
| Description | 600V 53A MOS Power Transistor |
| Download | AOK53S60 Download (PDF) |
|
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Product Summary The AOK53S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested Top View TO247 700V 215A 0.07Ω 59nC 15µJ D AOK53S60 Orderable Part Number AOK53S60 S D G Package Type TO-247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G ID IDM IAR EAR EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics TL Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RθJA RθCS Maximum Junction-to-Case RθJC G S Form Tube Minimum Order Quantity 240 AOK53S60 600 ±30 53 33 215 9.5 45 1688 520 4.2 100 20 -55 to 150 300 AOK53S60 40 0.5 0.24 Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev.1.0: August 2014 www.aosmd.com Page 1 of 6 AOK53S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=150°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=
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