Datasheet Details
| Part number | AOK5N100 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 343.71 KB |
| Description | N-Channel MOSFET |
| Download | AOK5N100 Download (PDF) |
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| Part number | AOK5N100 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 343.71 KB |
| Description | N-Channel MOSFET |
| Download | AOK5N100 Download (PDF) |
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Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOK5N100L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-247 1100@150℃ 4A < 4.2Ω D AOK5N100 S D G Orderable Part Number AOK5N100L Package Type TO-247 Green Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RθJA RθCS RθJC G S Form Tube Minimum Order Quantity 240 AOK5N100 1000 ±30 4 2.5 15 2.8 117 235 5 195 1.6 -55 to 150 300 AOK5N100 40 0.5 0.64 Units V V A A mJ mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W Rev.1.0: December 2013 www.aosmd.com Page 1 of 5 AOK5N100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=1000V, VGS=0V VDS=800V, TJ=125°C IGSS VGS(th) Gate-Body leakage current Gate Threshol
AOK5N100 1000V,4A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOK5N100 | N-Channel MOSFET | INCHANGE |
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