Datasheet Details
| Part number | AOL1454G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.31 KB |
| Description | 40V N-Channel MOSFET |
| Download | AOL1454G Download (PDF) |
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Overview: AOL1454G 40V N-Channel AlphaSGT TM General.
| Part number | AOL1454G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 370.31 KB |
| Description | 40V N-Channel MOSFET |
| Download | AOL1454G Download (PDF) |
|
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification • DC-Motor Driver UltraSO-8TM Top View Bottom View D Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 40V 46A < 5.9mΩ < 9.2mΩ D G S S G G S Orderable Part Number AOL1454G Package Type Ultra SO8 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 46 46 155 25 20 20 60 52 20.5 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 1.9 Max 20 50 2.4 Units °C/W °C/W °C/W Rev.1.0: October 2017 www.aosmd.com Page 1 of 6 AOL1454G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current
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