Datasheet Details
| Part number | AOLV66935 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 278.38 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOLV66935-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AOLV66935 100V N-Channel AlphaSGT TM General.
| Part number | AOLV66935 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 278.38 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOLV66935-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power AlphaSGTTM Technology • Robust SOA for linear mode operation • Low RDS(ON) • MSL1 up to 260°C peak reflow • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100V 334A < 1.85mΩ Applications • Hot swap • Load switch • Soft start • 48V systems 100% UIS Tested 100% Rg Tested Max Tj=175°C LFPAK8x8 Top View Bottom View D D PIN1 Orderable Part Number AOLV66935 G S PIN1 S S G S Package Type LFPAK8x8 Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 334 236 1336 100 500 428 214 -55 to 175 Units V V A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A D Maximum Junction-to-Case Steady-State Steady-State Symbol RqJA RqJC Max 40 0.35 Units °C/W °C/W Rev 1.2: July 2025 www.aosmd.com Page 1 of 7 AOLV66935 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input CapacitanceG Coss Output CapacitanceG Crss Reverse Transfer CapacitanceG VGS=0V, VDS=50V, f=200KHz Rg Gate resistance SWITCHING PARAMETERSG f=1MHz Qg(10V) Qgs Qgd Total Gate ChargeG Gate Source
| Part Number | Description |
|---|---|
| AOL1202 | 30V N-Channel MOSFET |
| AOL1206 | 30V N-Channel MOSFET |
| AOL1208 | 30V N-Channel MOSFET |
| AOL1240 | 40V N-Channel MOSFET |
| AOL1242 | 40V N-Channel MOSFET |
| AOL1400 | N-Channel FET |
| AOL1401 | P-Channel FET |
| AOL1408 | N-Channel FET |
| AOL1412 | N-Channel FET |
| AOL1414 | N-Channel FET |