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AOMU66414Q Datasheet 40V DUAL N-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOMU66414Q 40V DUAL N-Channel AlphaSGT TM AEC-Q101 Qualified.

General Description

• Trench Power AlphaSGTTM Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 40V 40V 85A 85A < 2.3mΩ < 2.3mΩ < 3.5mΩ < 3.5mΩ Applications • Synchronous Rectification in DC-DC / AC-DC converters • Motor drive for 12V-24V systems • Oring switches 100% UIS Tested 100% Rg Tested Top View DFN 8X6 Bottom View Top View PIN1 G2 S1/D2 G1 1 S1/D2 G1 S1/D2 2 S2 PIN1 Orderable Part Number AOMU66414Q D1 D1 D1 S2 S2 S1/D2 3 G2 4 Package Type DFN 8x6 Q1 8 D1 7 D1 6 S2 5 S2 Q2 Form Tape & Reel Bottom View G2 S2 S1/D2 S1/D2 D1 G1 Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.3mH C VDS SpikeI 10µs TC=25°C Power Dissipation B TC=100°C VGS ID IDM IDSM IAS EAS VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 40 40 ±20 ±20 85 85 85 85 260 260 40 40 32 32 30 30 135 135 48 48 68 65 34 32.5 6.2 6.2 4 4 -55 to 175 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case (Note) t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 Typ Q2 Max Q1 Max Q2 16 16 20 20 45 45 55 55 1.7 1.8 2.2 2.3 Units °C/W °C/W °C/W Rev.1.0 :March 2018 www.aosmd.com Page 1 of 10 AOMU66414Q Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 IDSS Zero Gate Voltage D

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